Aluminum Nitride Formula

aluminum nitride formula is an inorganic compound of aluminum and nitrogen represented by the chemical formula AlN. This material is known for its high thermal conductivity and electrical insulation properties. It is also used as a ceramic and can be found in many different applications.

AlN is a III-V semiconductor material that has aroused much interest because of its outstanding features, such as high thermal conductivity (320 Wm1 K), high electrical resistance (>1010 Ocm), low dielectric constant (8.6), wide band gap (6.2eV), and low thermal expansion coefficient (4.2x 10-6degC)-1 that match well with silicon and GaN semiconductors. It is also used in electronic devices, such as light-emitting diodes (LEDs), to improve emission efficiency and reduce power consumption.

The crystalline phase of aluminum nitride forms in the hexagonal wurtzite crystal structure that contains two interpenetrating HCP lattices with lattice constants c and a. The nonidealities in this structure give rise to spontaneous polarization. This property is important for developing thin films on metal-polar faces or nitrogen-polar surfaces that can induce a high density of free carriers at III-nitride heterostructure interfaces completely dispensing with intentional doping.

In addition, this ceramic material is used to create thermally conductive potting compounds and thermal pads that can be placed on substrates for electronic packaging. It also has a number of other uses, including in mobile phone filters, micromachined ultrasound transducers, and chemical sensors for detecting toxic gases.

It is also a vital material for the manufacture of plastics and resins, as it can be added to these materials to make them more thermally conductive. These are often used to produce heat sinks and heat spreaders that can transfer large amounts of heat away from circuit components.