Tag: gallium nitride

Application Fields of Gallium Nitride

Gallium nitride (GaN) is a wide gap semiconductor materials, widely used in multiple fields due to its excellent physical, electrical, and optical properties.

1.Semiconductor lighting

Gallium nitride is the most widely used in the field of semiconductor lighting. Due to its high transparency, high reflectivity, and high luminescence, gallium nitride materials have great advantages in manufacturing high-performance LED lamps. Compared with traditional incandescent and fluorescent lamp, LED lamps have higher luminous efficiency and longer service life, making them widely used in indoor and outdoor lighting, displays, automotive lighting, and other fields.

In semiconductor lighting, gallium nitride materials are mainly used as substrates for LED chips. LED chips are the main core components of LED lights, and their luminous efficiency and service life directly determine the performance of the entire LED light. As a substrate material, Gallium nitride has advantages such as high thermal conductivity, high stability, and high chemical stability. It can improve LED chips’ luminous efficiency and stability, reduce manufacturing costs, and produce various shapes and specifications of LED products.

2.High-temperature electronic devices

Gallium nitride is also widely used in the field of high-temperature electronic devices. Due to its electrical properties, such as high breakdown electric field and high electron saturation rate, gallium nitride can be used to produce electronic devices that operate in high-temperature environments.

In the aerospace field, due to the harsh working environment, it is necessary to use electronic devices that can work stably in high-temperature environments. Gallium nitride, as a high-temperature semiconductor material, is mainly used in manufacturing electronic devices such as transistors and field-effect transistors in flight control and fire control systems. In addition, in the field of power transmission and distribution, gallium nitride materials can also be used to manufacture high-temperature electronic devices such as power electronic switches and converters, improving the efficiency and stability of equipment.

3.Solar cells

The application of gallium nitride in solar cells has also received great attention. Due to its high transparency and electron saturation speed, high-efficiency solar cells can be manufactured.

Traditional solar cells mainly use silicon as the material. Although the manufacturing cost of silicon solar cells is low, their bandgap width is narrow (about 1.1eV), and their photoelectric conversion efficiency is limited. Gallium nitride solar cells have a wider energy gap width (about 2.3eV), which can absorb more sunlight and have higher photoelectric conversion efficiency. In addition, the manufacturing cost of gallium nitride solar cells is relatively low, which can provide the same photoelectric conversion efficiency at a lower price, thus having great potential in the photovoltaic industry.

4.Detectors

Gallium nitride is also widely used in the field of detectors. Due to their high transparency and reactivity, high-efficiency detectors such as spectral and chemical sensors can be manufactured.

In the security field, efficient X-ray detectors can be manufactured using gallium nitride, which can be used for security checks in airports and important buildings. In addition, in environmental monitoring, gallium nitride materials can also be used to manufacture detectors, such as gas and photochemical sensors, for detecting environmental parameters such as air quality and pollutants.

5.Other application areas

In addition to the abovementioned application, gallium nitride is also widely used in other fields. For example, gallium nitride can be used to manufacture microwave and high-frequency devices, such as high electron mobility transistors (HEMTs) and microwave monolithic integrated circuits (MMICs), for use in fields such as radar, communication, and electronic countermeasures. In addition, gallium nitride can also be used to make deep ultraviolet optoelectronic devices and high-power lasers.

Gallium nitride (GaN) is a wide gap semiconductor materials, widely used in multiple fields due to its excellent physical, electrical, and optical properties. 1.Semiconductor lighting […]

New discovery of the Gallium nitride material’s advantage

Gallium nitride is a large-bandgap semiconductor.Gallium nitride can be used to make microwave power transistors. It is used in the development of optoelectronics and microelectronics. It has similar performance, strong resistance against radiation, direct band gap, atom, and high thermal conductivity.
When used and stored as specified, the product will not decompose.
Avoid contact with oxidants, heat and moisture.
At 1050 deg. C, Gallium nitride starts to decompose: 2Gallium (s)= 2Ga(g)+N2(g). Gallium Nitride Crystals are classified as wurtzite type hexagonal systems by X-ray Diffraction.
Gallium Nitride is not decomposed by cold or heated water, concentrated or dilute hydrochloric acid (including nitric and sulfuric acids), or cold 40% HF. It is stable when cold concentrated alkali is used, and it becomes soluble with alkali on heating.
Gallium nitride: Benefits and advantages
Global semiconductor research is currently at the forefront of the development of new materials, such as gallium nitride. The development of new semiconductor materials is focused on microelectronics, optoelectronics, and other devices. As a successor to Si, Ge is a semiconductor material that includes SiC, diamonds, and similar materials. Semiconductor material, second generation GaAs, InP composite semiconductor materials, third generation semiconductor materials. It has a direct band-gap of a wide range, atomic bonds that are strong, high thermal conduction, good chemical resistance (no acid can corrode it), and radiation resistance. It has a broad range of application possibilities for photoelectrical, high temperature and high power devices and high frequency microwave devices.

Gallium nitride has overcome a major setback for transistors
Imagine that silicon-based products are more expensive than devices made of gallium nitride. Cost-effectiveness is a strong argument. For example, Gallium nitride devices can be used instead of silicon in situations where lower power loss and higher power density are needed.
Gallium nitride Systems – a manufacturer of Gallium nitride – designed a low-current and high-capacity Gallium nitride Power Transistor for industrial and consumer applications. The cost was less than $1.00.
Efficient power conversion (EPC), has been promoting Gallium-nitride for the past 14 years. They claim that Gallium-nitride is going to replace silicon in semiconductors one day. But EPC’s claims have some validity. Since they are made in a similar way to silicon, gallium-nitride transistors or integrated circuits can be manufactured without excessive changes.
Gallium nitride substrates are also smaller and suitable for applications with low voltage (500V). Packaging costs will be reduced by 50% compared with silicon-based packages.
EPC Solutions was attracted to the solution because it is based on Gallium nitride and has better performance with lower manufacturing costs. Look at EPC’s solution that uses Gallium nitride for more efficient components.
(aka. Technology Co. Ltd., a trusted global Gallium Nitride Powder supplier & Manufacturer with more than 12 years’ experience in providing high-quality Nanomaterial and chemicals. Currently, we have developed a number of materials. Gallium nitride manufactured by our company is high in purity, has fine particles and contains low impurities. To get the most recent price of Gallium powder, please send us an e-mail or click the desired products to send an enquiry.

Gallium nitride is a large-bandgap semiconductor.Gallium nitride can be used to make microwave power transistors. It is used in the development of optoelectronics and microelectronics. […]

The Properties And Application of Gallium nitride

What is Gallium Nitride (Galium Nitride)?
Inorganic gallium nitride has the chemical formula GaN. It is made up of gallium, nitrogen and a chemical compound. It is a direct-bandgap semiconductor that has been widely used in light emitting diodes (LEDs) since 1990. The compound’s structure is similar to that of wurtzite and has high hardness. Gallium Nitride has an energy gap of about 3.4 electron-volts. This can be useful in high-power, high-speed optoelectronic component. Gallium nitride is used, for instance, in violet lasers. You can use it without nonlinear semi-conductor pumped solid state lasers.

In 2014, Yuki Akasaki, professor at Nagoya University in Japan as well as Hiroshi Amao, professor of Nagoya University in Japan won the Nobel Prize in Physics. Shuji Nakamura, a professor of University of California Santa Barbara, also received the prize.

Applications of GaN

GaN series has low heat production rate and high electric breakdown field. They are important materials for developing high-temperature and high power electronic devices, as well high-frequency microwave devices.

GaN materials are ideal for light-emitting devices with short wavelengths. GaN, and its alloys, cover a wide range of spectral wavelengths from red through to ultraviolet.

GaN is the hottest area of research in semiconductors. This is a new semiconductor material used for microelectronics and optoelectronics. Along with other semiconductor materials, such as SIC or diamond, this material is known as a successor to the original generation of Ge and Si.

Semiconductor material, second-generation GaAs materials, InP compounds semiconductor materials and third generation semiconductor materials. It has a large bandgap and strong atomic bonds. It also has high thermal conductivity (nearly uncorroded by acid) as well as strong radiation resistance. It’s used in photoelectronics and devices that require high temperatures and power.

Tech Co., Ltd. () has over 12 years’ experience in chemical product development and research. If you’re looking for high-quality galium nitride please contact Contact us Send an inquiry.

What is Gallium Nitride (Galium Nitride)? Inorganic gallium nitride has the chemical formula GaN. It is made up of gallium, nitrogen and a chemical compound. […]

New technology in the field of charging heads—gallium nitride charger

Gallium Nitride: Overview This is an inorganic material with the chemical formula GaN. It’s a combination of nitrogen and galium that acts as a semiconductor with a large direct energy gap. It is widely used since 1990 in light-emitting devices. This compound has high hardness and a similar structure to wurtzite. Gallium Nitride has an energy gap of about 3.4 electron-volts. This can be useful in high-power, high-speed optoelectronic component. Gallium nitride is used, for instance, in violet lasers and non-linear solid-state semiconductor lasers. The conditions allow for the production of a laser that emits a violet light (405nm).

Gallium Nitride: Properties and Stability
1. Avoid contact with heat and moisture.
2. GaN starts to decompose at 1050degC: 2GaN(s)=2Ga(g)+N2(g). GaN crystal belongs in the hexagonal system wurtzite-type lattice, as shown by X ray diffraction.
3. It is known that GaN remains stable even at high temperatures. The vapor pressure of GaN at 1130 degrees is lower than what can be calculated using enthalpy, entropy and temperature. This is due the polymer molecule (GaN).
4. Cold or hot water, diluted or concentrated hydrochloric or sulfuric acids, or cold 40% of HF, will not dissolve GaN. It is stable with cold concentrated alkali. However, it can be dissolved by heated alkali.

Gallium nitride material introduction
GaN is the latest semiconductor material to be developed. It is a semiconductor material used for microelectronics and optoelectronics. Along with other semiconductor materials, such as SIC or diamond, this material is often referred to as the successor generation of Ge and Si. Semiconductor material, second-generation GaAs and InP compound semiconductors materials. It has a large bandgap direct, strong atomic ties, high thermal conduction, good chemical resistance (not easily corroded by acid) and a strong anti-radiation capability. It’s used in high temperature, high power and optoelectronic devices.

What is the gallium nitride charge?
Gallium nitride can be described as the core material for third-generation semiconductors. Comparing gallium nitride with silicon, it has a larger bandgap. The wider bandgap means that gallium is nitride has higher conductivity and can withstand greater voltages. With the same volume of both materials, gallium is far more efficient than silicone.
In many power-management products, gallium is more prominent. At the application-level, gallium nitride is used to charge faster and in a smaller space.
Users will benefit from faster charging but not more volume. Due to the GaN material’s characteristics, the charger can be made smaller and lighter, and it will also have a significant increase in the heat generated and the efficiency of conversion. The heating efficiency will decrease significantly for many products like CPUs, charger heads, etc.

What is the price of gallium-nitride charger?
They are also very easy to use. These chargers are small and have a higher efficiency. They can be used to meet many of the demands of modern life, but are expensive.
According to current market prices, the 120w GaN notebook charger is usually around 300 Yuan. That is two or three times more expensive than the standard 120w charger. Comparing the 120W GaN to the 65w GaN, it is roughly three times more expensive. A 120w charger will buy a normal 120w computer power supply plus a GaN 65w charger.

The following is a list of the most recent articles about
(aka. Technology Co. Ltd., a trusted global chemical materials supplier & manufacture with more than 12 years’ experience in supplying super-high-quality chemicals and gaN powder. Tongrun, a market leader in the nanotechnology industry and manufacturer of powders, dominates this sector. Our professional team offers perfect solutions to help various industries improve their efficiency, create value and overcome different challenges. You can contact brad@ihpa.net for GaN Powder.
OR go to the following link: https://www.nanotrun.com/

Gallium Nitride: Overview This is an inorganic material with the chemical formula GaN. It’s a combination of nitrogen and galium that acts as a semiconductor […]

What are the advantages of gallium nitride chargers?

Today, mobile phones are an integral part of people’s daily lives and communication. The “battery anxiety” disorder is a common problem that affects many people. When the battery on a mobile phone starts to run out, people start feeling anxious and nervous. When the phone is connected to a charger, the sound can be very quiet.Although we use chargers daily, it seems that few people think about the best way to use them. Today, gallium-nitride cells are also very common. What is the gallium nitride tech?
1. What is Gallium Nitride?
In this year’s market, gallium nitride has become a popular charging technology. This new technology is being hailed as the ideal charger for the future. GaN is a powerful material, but what exactly is it?
Gallium Nitride is a semiconductor material with large bandgaps. It has high thermal conductivity. High temperature resistance. Radiation resistance. Acid and alkali resistant. Early on, it was widely applied in new energy cars, rail transits, smart grids, semiconductor lighting, and new generation mobile communications. Third-generation material for semiconductors. Due to its cost-effectiveness and technological advancement, gallium is used widely in consumer electronics. Chargers are one of these. The bandgap of gallium is wider, and gallium has better conductivity. Chargers using gallium-nitride have higher output efficiency. Gallium nitride charging heads, for instance, can deliver more output power at a volume similar to that of an Apple 5W charger.
The birth of gallium-nitride as a new semiconductor is like thunder in the earth. With its advantages, the technological revolution has spread rapidly to 5g, RF fast charging, and other markets.
2. What are the advantages to the GaN chargers
Small volume
Gallium nitride, a new material for semiconductors that can be used to replace germanium or silicon, is an alternative. The power of the chargers has increased from 5v1a to 65W. While the charger’s volume is still acceptable, the contradiction between power output and charger volume is long lasting. Fast charging can also cause a problem with heating. The switching frequency is improved but the losses are small. The high switching rate can reduce the size of the transformer and the capacitor. This will result in a smaller volume for the GaN-based charging head.

High Power
GaN has a bandgap that is significantly higher than silicon’s, so it can conduct higher voltage for a longer period of time. GaN chips have a larger bandgap, meaning that they can conduct higher voltages over time. It is important to not only conserve electricity but also to charge faster.
It is easier to adapt to hotter environments
GaN semiconductors have a higher thermal conductivity and a larger bandgap compared to the previous two generations. GaN can be used at temperatures over 200°C, is highly reliable, and minimizes the risk of overcharging.
3. Why do we still use the old charging technology?
Why are we still using old charging technologies when the technology of gallium nitride has proven to be so effective? Silicon components are manufactured in a well-established process and cost less than a single part. Because gallium nitride has only recently been commercialized, its production cost is higher than silicon.
In addition, GaN’s actual charging experience is not very impressive. There is still much room for optimization. On the market, gallium-nitride batteries are at least 30 percent more expensive than regular chargers.
(aka. Technology Co. Ltd., a global supplier of chemical materials and manufacturers with over 12 year’s experience in providing high-quality nanomaterials and chemicals. Gallium nitride produced by our company is of high purity and fine particle size. Contact us if you need to.

Today, mobile phones are an integral part of people’s daily lives and communication. The “battery anxiety” disorder is a common problem that affects many people. […]

Why is gallium nitride important?

What is it? g allium nitride? Gallium Nitride is an inorganic substance. The chemical formula GaN refers to a mixture of nitrogen, gallium and gallium. This compound has been used since 1990 in light emitting diodes. This compound has a similar structure as wurtzite. It is also very hard. Because of its large energy gap, gallium nitride can be used in optoelectronic devices that are high-power and high-speed. You can use gallium nitride in laser diodes with purple light, and without the need for a diode pump solid-state. Produces violet (405nm), laser.

Is gallium-nitride more effective than silicon?
Because of its higher breakdown, gallium nitride outperforms silicon in high voltage circuits like high-power products. Engineers and manufacturers also have the option to use gans in similar voltage applications. However, they can be smaller.
What is the importance of gallium nitride?
Because it can significantly improve performance across a broad range of applications and requires less energy and physical space than traditional silicon technologies, gallium nitride is becoming more important.
Is gallium-nitride the silicon tomorrow?
Share all options: Gallium-nitride is the future’s silicon. Anker has revealed its new tiny power brick. This is due to its use of gallium Nitride (GaN) instead of silicon.
G allium nitride Properties
An overview
GaN is a very stable and hard material. However, it also has a high melting temperature of around 1700. The iii — vi group of compounds contains the highest level of ionization (0.5 or 0.43). GaN crystals can be found in hexagonal wurtzite forms when they are subject to atmospheric pressure. It is composed of four atoms and is approximately half the size of GaAs.
The chemical characteristics
GaN is insoluble at room temperature in water, acids, bases, and can dissolve slowly in hot alkaline solutions. This can be used as a tool to detect defects in these low-quality GaN crystallines. GaN is unstable in HCL and H2 gas at high temperatures, but most stable in N2 gas.
The structural characteristics
GaN crystal structure is primarily composed of two types: sphalerite and wurtzite.
The optical properties
GaN’s properties are focused on its applications in blue-emitting and violet light-emitting gadgets. Maruska and Tietjen measured the GaN’s direct gap energy to be 3.39eV for the first time. Pankove et. al. investigated the temperature dependence on the GaN bandgap. estimated an empirical formula for the bandgap temperature coefficient: dE/dT=-6.0×10-4eV/ K.Monemar determined that the basic bandgap was 3.503eV+-0.0005eV and Eg=3.503+ (5.08×10-4T2)/(T-996) eV at 1.6kT.
Additionally, many are also studying the optical properties GaN.
(aka. Technology Co. Ltd. (aka. Our company has developed a number of materials. Our sodium oleate is high in purity, fine particles, and has low impurities. Send us an e-mail or click the Needed products Send an inquiry

What is it? g allium nitride? Gallium Nitride is an inorganic substance. The chemical formula GaN refers to a mixture of nitrogen, gallium and gallium. […]

Recent articles