The Melting Point of TiO2

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TiO2 is an inorganic compound, also known as titanium(IV) oxide, that is used in a variety of applications, such as sensors for CO, H2, ozone, and formaldehyde. The melting point of TiO2 is 1840degC.

The structure of TiO2 is dependent on the annealing conditions. For example, it is possible to form a TiO2-x/TiO2-based heterostructure by annealing at 800 degC.

TiO2 is an n-type semiconductor, with a charge mobility of 0.4 cm2/V s. It has a relatively low melting point. However, it is difficult to produce large Ti3O5 crystals due to the polymorphism of titanium oxides.

In addition, TiO2 has been applied as sensing material in room temperature sensors for CO, H2, ozone, formaldehyde, and other gases. Moreover, it has been used as a sensor in the sensing of C7H8.

There are several methods for forming TiO2 structures. One method involves thermochemical treatment. Another is ion irradiation. Ion irradiation results in a change in the crystalline structure of the titanium oxide. These changes can cause the formation of latent ion tracks. Similarly, excessive local heating may also lead to the formation of latent ion tracks.

An XPS analysis showed the presence of ion beam-induced vacancies in the TiO2 lattice. These vacancies are consistent with the lateral dimension of the ion track observed in high resolution TEM images. This indicates that the ion track forms inside the TiO2 material.

The model of thermal spike induced melting predicts that this type of melting is possible. The resulting strain and distortions of the crystalline structure are manifested as shi in the Raman spectra.

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