What is Aluminum Nitride?


What is it?



Aluminum Nitride



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Aluminum nitride or covalent bond compounds, chemical formula is AIN, is an atomic structure that is non-toxic, white, or off-white.


Aluminum Nitride has the following main features


AlN can be stored at temperatures up to 2200°C. The strength of AlN at room temperature is very high. With increasing temperatures, it decreases slowly. It is an excellent thermal shock material because it has a low thermal conductivity and small thermal expansion coefficient. It is highly resistant to corrosion of molten metal and makes an excellent crucible material for casting aluminum alloy, pure iron or aluminum. Aluminum nitride, which is an excellent electrical insulator and has good dielectric properties, is also promising as a potential electrical component. The gallium arsenide coating with aluminum nitride protects it against ionization during annealing. Aluminum nitride also acts as a catalyst in the conversion of hexagonal to cubic boron nutride. It reacts slowly at room temperature with water. Aluminum powder can be made in nitrogen atmosphere or ammonia at 8001000. It is white to gray-blue and can be used as a catalyst. It can also be produced by reaction of Al2O3–C-N2 system at 16001750. The product is off-white. Or by the vapor phase reaction of aluminum chloride with ammonia. The vapor phase deposition method for AlCl3/NH3 can produce the coating.


Aluminum Nitride Properties

Other Titles
Aluminium nitride

No.
24304-00-5

Combination Formula
AlN

Molecular Weight
40.9882

Appearance
White powder to pale yellow powder

Melting Point
2200 degC

Boiling Point
2517 degC (dec.)

Density
2.9 to 33% g/cm3

Solubility of H2O
N/A

Electrical Resistivity
10 to 12 10x 10x O.m

Poisson’s Ratio
0.21 to $0.31

Specific heat
780 J/kg-K

Thermal Conductivity
80 to 200 W/mK

Thermal Expansion
4.2 to 5.4 um/mK

Young’s Modulus
330 GPa

Exact
40.9846

Monoisotopic
40.9846


AlN powder CAS 24304 00-5


Aluminum Niitride


The majority of current research is focused on developing a semiconductor-based light emitting device (gallium nutride or alloy aluminum gallium nanonitride) that can operate in ultraviolet light with a wavelength up to 250 nanometers. An inefficient diode can emit light up to 210nm [1] as reported in May 2006. An aluminum nitride single crystal has an energy difference of 6.2eV, measured by the reflection of UV rays. The energy gap is theoretically large enough to allow some waves with wavelengths of around 200 nanometers to pass through. However, commercial implementation presents many challenges. Aluminum nitride has many uses in optoelectronics. This includes as dielectric layers for optical storage interfaces and electronic substrates. Also, it is used in military applications as a chip carrier with high thermal conductivity.

The properties of aluminum Nitride’s piezoelectric effects make epitaxial stretching of aluminum Nitride crystals a good choice for surface acoustic-wave detectors. The detectors can be placed on silicon wafers. It is difficult to produce thin films reliably in these locations.

Aluminum nitride clays can be used for heat exchangers and high-temperature structural parts.

It can be used to resist corrosion of aluminum, iron, and other metals.


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